FNK30H150 Datasheet and Replacement
Type Designator: FNK30H150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 1300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
FNK30H150 substitution
FNK30H150 Datasheet (PDF)
fnk30h150.pdf
FNK30H150Enhancement Mode Power MOSFET FNK N-Channel Description The uses advanced trench technology and FNK30H150design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
Datasheet: 3SK290 , AO4400 , BUZ48 , CEP6030L , CEB6030L , ECX10N20 , FHP1906A , FIR5N60FG , MMD60R360PRH , GPT09N50 , GPT09N50D , HY1707P , HY1707M , HY1707B , HY1707I , HY1707MF , HY1707PS .
History: IRHM57064 | STD20NF06LT4 | NTD3055-094-1G | STD7LN80K5 | CS40N06 | AOD2910 | NCE60ND20AK
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History: IRHM57064 | STD20NF06LT4 | NTD3055-094-1G | STD7LN80K5 | CS40N06 | AOD2910 | NCE60ND20AK
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