All MOSFET. FNK30H150 Datasheet

 

FNK30H150 Datasheet and Replacement


   Type Designator: FNK30H150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220
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FNK30H150 Datasheet (PDF)

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FNK30H150

FNK30H150Enhancement Mode Power MOSFET FNK N-Channel Description The uses advanced trench technology and FNK30H150design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

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History: AP6901AGSM-HF | CED05N8 | MC08N005C | AON6794 | BRCS25N60PH | IRLR024 | BL10N70-A

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