FNK30H150 PDF and Equivalents Search

 

FNK30H150 Specs and Replacement

Type Designator: FNK30H150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220

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FNK30H150 datasheet

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FNK30H150

FNK30H150 Enhancement Mode Power MOSFET FNK N-Channel Description The uses advanced trench technology and FNK30H150 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒

Detailed specifications: 3SK290, AO4400, BUZ48, CEP6030L, CEB6030L, ECX10N20, FHP1906A, FIR5N60FG, RU7088R, GPT09N50, GPT09N50D, HY1707P, HY1707M, HY1707B, HY1707I, HY1707MF, HY1707PS

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