All MOSFET. HY1707M Datasheet

 

HY1707M Datasheet and Replacement


   Type Designator: HY1707M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220FB-3S
 

 HY1707M substitution

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HY1707M Datasheet (PDF)

 8.1. Size:6931K  hymexa
 hy1707.pdf pdf_icon

HY1707M

HY1707P/M/B/I/MF/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 70V/80A,RDS(ON)= 6m (typ.) @ VGS=10VS Avalanche Rated DSD GGS Reliable and Rugged S DDGGTO-263-2L TO-262-3L Lead Free and Green Devices Available TO-220FB-3L TO-220FB-3S(RoHS Compliant)SDGS D SDGGApplicationsTO-3PS-3L TO-3PS-3MTO-220MF-3LD Power Man

 9.1. Size:224K  1
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HY1707M

HY1708MF-VBwww.VBsemi.comDisclaimerAll products due to improve reliability, function or design or for other reasons, product specifications anddata are subject to change without notice.Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or theirrepresentatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any er

Datasheet: CEB6030L , ECX10N20 , FHP1906A , FIR5N60FG , FNK30H150 , GPT09N50 , GPT09N50D , HY1707P , AO4468 , HY1707B , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 , ME7170-G , TP0610T .

History: NCEP01T18 | RU8205G

Keywords - HY1707M MOSFET datasheet

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