HY1707B PDF and Equivalents Search

 

HY1707B Specs and Replacement


   Type Designator: HY1707B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO263
 

 HY1707B substitution

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HY1707B datasheet

 8.1. Size:6931K  hymexa
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HY1707B

HY1707P/M/B/I/MF/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features 70V/80A, RDS(ON)= 6m (typ.) @ VGS=10V S Avalanche Rated D S D G G S Reliable and Rugged S D D G G TO-263-2L TO-262-3L Lead Free and Green Devices Available TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D S D G G Applications TO-3PS-3L TO-3PS-3M TO-220MF-3L D Power Man... See More ⇒

 9.1. Size:224K  1
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HY1707B

HY1708MF-VB www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any er... See More ⇒

Detailed specifications: ECX10N20 , FHP1906A , FIR5N60FG , FNK30H150 , GPT09N50 , GPT09N50D , HY1707P , HY1707M , IRFP064N , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 , ME7170-G , TP0610T , WML07N65C2 .

History: STN4416 | NTUD3169CZ | DH060N07D | BLF879P | BRL2N60 | 2SK3977 | RFD8P06E

Keywords - HY1707B MOSFET specs

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