HY1707B Specs and Replacement
Type Designator: HY1707B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
HY1707B substitution
HY1707B datasheet
hy1707.pdf
HY1707P/M/B/I/MF/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features 70V/80A, RDS(ON)= 6m (typ.) @ VGS=10V S Avalanche Rated D S D G G S Reliable and Rugged S D D G G TO-263-2L TO-262-3L Lead Free and Green Devices Available TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D S D G G Applications TO-3PS-3L TO-3PS-3M TO-220MF-3L D Power Man... See More ⇒
hy1708mf-vb.pdf
HY1708MF-VB www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any er... See More ⇒
Detailed specifications: ECX10N20 , FHP1906A , FIR5N60FG , FNK30H150 , GPT09N50 , GPT09N50D , HY1707P , HY1707M , IRFP064N , HY1707I , HY1707MF , HY1707PS , HY1707PM , LTP70N06 , ME7170-G , TP0610T , WML07N65C2 .
History: STN4416 | NTUD3169CZ | DH060N07D | BLF879P | BRL2N60 | 2SK3977 | RFD8P06E
Keywords - HY1707B MOSFET specs
HY1707B cross reference
HY1707B equivalent finder
HY1707B pdf lookup
HY1707B substitution
HY1707B replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: STN4416 | NTUD3169CZ | DH060N07D | BLF879P | BRL2N60 | 2SK3977 | RFD8P06E
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