All MOSFET. HY1707B Datasheet

 

HY1707B MOSFET. Datasheet pdf. Equivalent

Type Designator: HY1707B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 178 W

Maximum Drain-Source Voltage |Vds|: 70 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 88 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO263

HY1707B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1707B Datasheet (PDF)

4.1. hy1707.pdf Size:6931K _update-mosfet

HY1707B
HY1707B

HY1707P/M/B/I/MF/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V S Avalanche Rated D S D G G S Reliable and Rugged S D D G G TO-263-2L TO-262-3L Lead Free and Green Devices Available TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D S D G G Applications TO-3PS-3L TO-3PS-3M TO-220MF-3L D • Power Man

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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