All MOSFET. WMP07N65C2 Datasheet


WMP07N65C2 MOSFET. Datasheet pdf. Equivalent

Type Designator: WMP07N65C2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 5.8 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1.14 Ohm

Package: TO-251

WMP07N65C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


WMP07N65C2 Datasheet (PDF)

1.1. wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf Size:636K _update-mosfet


 WML0 MM07N65C 07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C 07N65C2, WMP07N65C2, WM C2 650 Junction ET 0V 1.0Ω Super J n Power MOSFE Descrip ption WMOSTM C2 is Wa 2nd generation super ayon’s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

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