All MOSFET. WMH07N65C2 Datasheet

 

WMH07N65C2 Datasheet and Replacement


   Type Designator: WMH07N65C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.14 Ohm
   Package: TO-251S2
 

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WMH07N65C2 Datasheet (PDF)

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WMH07N65C2

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

Datasheet: LTP70N06 , ME7170-G , TP0610T , WML07N65C2 , WMM07N65C2 , WMO07N65C2 , WMP07N65C2 , WMG07N65C2 , IRFP460 , 3N155 , 3N156 , 3N172 , 3N173 , 3N188 , 3N189 , 3N60AF , 3N60F .

History: IPP45N04S4L-08

Keywords - WMH07N65C2 MOSFET datasheet

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