All MOSFET. 3SK323 Datasheet

 

3SK323 Datasheet and Replacement


   Type Designator: 3SK323
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 6 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 0.02 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm
   Package: SC61AA
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3SK323 Datasheet (PDF)

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3SK323

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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3SK323

3SK324 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0532-0100 Rev.1.00 May 18, 2005 Features Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V High Endurance Voltage; VDS = 6 V Outline RENESAS Package code: PTSP0004ZA-A(Package n

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STT3P2UH7 | IRFP21N60L | UPA2756GR | IXTA08N120P | STD6N60M2 | AP2318GEN-HF

Keywords - 3SK323 MOSFET datasheet

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