3SK323 Specs and Replacement

Type Designator: 3SK323

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 6 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.02 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm

Package: SC61AA

3SK323 substitution

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3SK323 datasheet

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3SK323

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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3SK323

3SK324 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0532-0100 Rev.1.00 May 18, 2005 Features Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V High Endurance Voltage; VDS = 6 V Outline RENESAS Package code PTSP0004ZA-A (Package n... See More ⇒

Detailed specifications: 3SK295, 3SK296, 3SK297, 3SK298, 3SK299, 3SK300, 3SK317, 3SK319, IRF9540N, MSAFX40N30A, 40P03, 4AK17, 4N60A, 4N60AF, 4N60G, 4N80A, 4N80AF

Keywords - 3SK323 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs