3SK323 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3SK323
Marking Code: UG-
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 6 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
|Id|ⓘ - Maximum Drain Current: 0.02 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm
Package: SC61AA
3SK323 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3SK323 Datasheet (PDF)
3sk323.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
3sk324.pdf
3SK324 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0532-0100 Rev.1.00 May 18, 2005 Features Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V High Endurance Voltage; VDS = 6 V Outline RENESAS Package code: PTSP0004ZA-A(Package n
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STD11NM60N | MMIS70R1K4PTH | MTP9435L3 | AOC3870A
History: STD11NM60N | MMIS70R1K4PTH | MTP9435L3 | AOC3870A
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