All MOSFET. 8N80A Datasheet

 

8N80A Datasheet and Replacement


   Type Designator: 8N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO-220AB
 

 8N80A substitution

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8N80A Datasheet (PDF)

 ..1. Size:439K  nell
8n80a 8n80af 8n80b.pdf pdf_icon

8N80A

RoHS 8N80 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(8A, 800Volts)DESCRIPTION The Nell 8N80 is a three-terminal silicon device with current conduction capability of 8A,fast switching speed, low on-state resistance,Dbreakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. suchas sw

 0.1. Size:938K  samsung
ssf8n80a.pdf pdf_icon

8N80A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 0.2. Size:935K  samsung
ssh8n80a.pdf pdf_icon

8N80A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1000 (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSy

Datasheet: 75N10B , MSAFA75N10C , MSAFX76N07A , 7N60AF , 7N60H , 7N90A , 7N90AF , 8N60H , STP65NF06 , 8N80AF , 8N80B , MSAEX8P50A , NID9N05ACL , 9N25A , 9N25AF , 9N90B , 9N90C .

Keywords - 8N80A MOSFET datasheet

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