8N80AF Specs and Replacement
Type Designator: 8N80AF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
Package: TO-220F
8N80AF substitution
- MOSFET ⓘ Cross-Reference Search
8N80AF datasheet
8n80a 8n80af 8n80b.pdf
RoHS 8N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (8A, 800Volts) DESCRIPTION The Nell 8N80 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw... See More ⇒
ssf8n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒
ssh8n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sy... See More ⇒
Detailed specifications: MSAFA75N10C, MSAFX76N07A, 7N60AF, 7N60H, 7N90A, 7N90AF, 8N60H, 8N80A, IRF830, 8N80B, MSAEX8P50A, NID9N05ACL, 9N25A, 9N25AF, 9N90B, 9N90C, AMA2N7002
Keywords - 8N80AF MOSFET specs
8N80AF cross reference
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