AMA421P Specs and Replacement
Type Designator: AMA421P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 126 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: DFN2X2
AMA421P substitution
- MOSFET ⓘ Cross-Reference Search
AMA421P datasheet
ama421p.pdf
Analog Power AMA421P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 26 @ VGS = -4.5V -8.8 Low thermal impedance -20 34 @ VGS = -2.5V -7.7 Fast switching speed DFN2X2 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS... See More ⇒
ama420n.pdf
Analog Power AMA420N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 9 @ VGS = 4.5V 15.0 Low thermal impedance 20 11 @ VGS = 2.5V 13.5 Fast switching speed DFN2X2 Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RA... See More ⇒
ama423p.pdf
Analog Power AMA423P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 42 @ VGS = -4.5V -6.6 Low thermal impedance -20 57 @ VGS = -2.5V -5.7 2mm x 2mm footprint DFN package 86 @ VGS = -1.8V -1 RDS rated at 1.8V Gate-drive DFN2x2-8 Typical Applications Battery Powered Instruments Portable... See More ⇒
Detailed specifications: NID9N05ACL, 9N25A, 9N25AF, 9N90B, 9N90C, AMA2N7002, AMA410N, AMA420N, 60N06, AMA423P, AMA430N, AMA433P, AMA440N, AMA450N, AMA460N, AMA461P, AMA520C
Keywords - AMA421P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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