AMA920N Specs and Replacement
Type Designator: AMA920N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 61 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: DFN2X2-6
AMA920N substitution
- MOSFET ⓘ Cross-Reference Search
AMA920N datasheet
ama920n.pdf
Analog Power AMA920N Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 58 @ VGS = 4.5V 4.6 Low thermal impedance 20 82 @ VGS = 2.5V 3.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA... See More ⇒
ama921p.pdf
Analog Power AMA921P Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 79 @ VGS = -4.5V -4.2 Low thermal impedance -20 110 @ VGS = -2.5V -3.6 Fast switching speed DFN2x2-6L Typical Applications Battery Powered Instruments Portable Computing Mobile Phones GPS Units and... See More ⇒
ama922n.pdf
Analog Power AMA922N Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 23 @ VGS = 4.5V 6.6 Low thermal impedance 20 33 @ VGS = 2.5V 5.6 Fast switching speed DFN2x2-6L Typical Applications Bottom View Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ... See More ⇒
Detailed specifications: AMA423P, AMA430N, AMA433P, AMA440N, AMA450N, AMA460N, AMA461P, AMA520C, IRF540N, AMA921P, AMA922N, AMA930N, AMA931PE, AMA960N, AMB430N, AMCC431P, AMCC530C
Keywords - AMA920N MOSFET specs
AMA920N cross reference
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