All MOSFET. AMA920N Datasheet

 

AMA920N Datasheet and Replacement


   Type Designator: AMA920N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: DFN2X2-6
      - MOSFET Cross-Reference Search

 

AMA920N Datasheet (PDF)

 ..1. Size:369K  analog power
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AMA920N

Analog Power AMA920NDual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)58 @ VGS = 4.5V4.6 Low thermal impedance2082 @ VGS = 2.5V3.9 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RA

 9.1. Size:318K  analog power
ama921p.pdf pdf_icon

AMA920N

Analog Power AMA921PDual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.2 Low thermal impedance -20110 @ VGS = -2.5V -3.6 Fast switching speed DFN2x2-6L Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and

 9.2. Size:305K  analog power
ama922n.pdf pdf_icon

AMA920N

Analog Power AMA922NDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)23 @ VGS = 4.5V6.6 Low thermal impedance 2033 @ VGS = 2.5V5.6 Fast switching speed DFN2x2-6L Typical Applications: Bottom View Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits

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History: SVGP15110NL5 | BUK454-800A | 2N4222A | RQ3E150GN | LSB65R380HT | MTBA5C10AQ8 | SVFP14N65CFJD

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