AMA922N
MOSFET. Datasheet pdf. Equivalent
Type Designator: AMA922N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 6.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 31
nS
Cossⓘ -
Output Capacitance: 74
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package: DFN2X2-6
AMA922N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AMA922N
Datasheet (PDF)
..1. Size:305K analog power
ama922n.pdf
Analog Power AMA922NDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)23 @ VGS = 4.5V6.6 Low thermal impedance 2033 @ VGS = 2.5V5.6 Fast switching speed DFN2x2-6L Typical Applications: Bottom View Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits
9.1. Size:318K analog power
ama921p.pdf
Analog Power AMA921PDual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.2 Low thermal impedance -20110 @ VGS = -2.5V -3.6 Fast switching speed DFN2x2-6L Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and
9.2. Size:369K analog power
ama920n.pdf
Analog Power AMA920NDual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)58 @ VGS = 4.5V4.6 Low thermal impedance2082 @ VGS = 2.5V3.9 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RA
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