AMA922N Datasheet and Replacement
Type Designator: AMA922N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 11 nC
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 74 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: DFN2X2-6
AMA922N substitution
AMA922N Datasheet (PDF)
ama922n.pdf

Analog Power AMA922NDual N-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)23 @ VGS = 4.5V6.6 Low thermal impedance 2033 @ VGS = 2.5V5.6 Fast switching speed DFN2x2-6L Typical Applications: Bottom View Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits
ama921p.pdf

Analog Power AMA921PDual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.2 Low thermal impedance -20110 @ VGS = -2.5V -3.6 Fast switching speed DFN2x2-6L Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and
ama920n.pdf

Analog Power AMA920NDual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)58 @ VGS = 4.5V4.6 Low thermal impedance2082 @ VGS = 2.5V3.9 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RA
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - AMA922N MOSFET datasheet
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