AMD532C Datasheet. Specs and Replacement

Type Designator: AMD532C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm

Package: TO-252AD-5

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AMD532C datasheet

 ..1. Size:140K  analog power
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AMD532C

Analog Power AMD532C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 95 @ V = 2.5V 20 GS 30 converters and power management in portable and 59 @ V = 4.5V 24 GS ... See More ⇒

 9.1. Size:234K  analog power
 amd533ce.pdf pdf_icon

AMD532C

Analog Power AMD533CE P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 4.5V 29 GS 30 converters and power management in portable and 35 @ V = 10V 36 GS ... See More ⇒

 9.2. Size:79K  analog power
 amd534c.pdf pdf_icon

AMD532C

Analog Power AMD534C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 39 @ V = 4.5V 30 GS 30 converters and power management in portable and 29 @ V = 10V 36 G... See More ⇒

 9.3. Size:140K  analog power
 amd530c.pdf pdf_icon

AMD532C

Analog Power AMD530C P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 45 @ V = 2.5V 29 GS 30 converters and power management in portable and 35 @ V = 4.5V 36 GS ... See More ⇒

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Detailed specifications: AMCC530C, AMCC920NE, AMCC921PE, AMCC922NE, AMCC924NE, AMD510C, AMD530C, AMD531C, IRFB4115, AMD533CE, AMD534C, AMD534CE, AMD540CE, AMF920NE, AMF922NE, AMF924NE, AMR430N

Keywords - AMD532C MOSFET specs

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