SDF4N100JAB Specs and Replacement
Type Designator: SDF4N100JAB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 max nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO254
SDF4N100JAB substitution
- MOSFET ⓘ Cross-Reference Search
SDF4N100JAB datasheet
Detailed specifications: SDF440, SDF450JAA, SDF450JAB, SDF460JEA, SDF460JEB, SDF460JEC, SDF460JED, SDF4N100JAA, MMIS60R580P, SDF4N60, SDF4N90JAA, SDF4N90JAB, SDF4NA100, SDF4NA100SXH, SDF50N40JAM, SDF50NA20GBF, SDF5N100JAA
Keywords - SDF4N100JAB MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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