SDF4N60 Specs and Replacement

Type Designator: SDF4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 max nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO254

SDF4N60 substitution

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SDF4N60 datasheet

 ..1. Size:165K  solitron
 sdf4n60.pdf pdf_icon

SDF4N60

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 9.1. Size:68K  solitron
 sdf4na100.pdf pdf_icon

SDF4N60

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 9.2. Size:166K  solitron
 sdf4n90.pdf pdf_icon

SDF4N60

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 9.3. Size:168K  solitron
 sdf4n100.pdf pdf_icon

SDF4N60

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Detailed specifications: SDF450JAA, SDF450JAB, SDF460JEA, SDF460JEB, SDF460JEC, SDF460JED, SDF4N100JAA, SDF4N100JAB, AOD4184A, SDF4N90JAA, SDF4N90JAB, SDF4NA100, SDF4NA100SXH, SDF50N40JAM, SDF50NA20GBF, SDF5N100JAA, SDF5N100JAB

Keywords - SDF4N60 MOSFET specs

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