SDF4NA100SXH Specs and Replacement

Type Designator: SDF4NA100SXH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 max nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO3

SDF4NA100SXH substitution

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SDF4NA100SXH datasheet

 5.1. Size:68K  solitron
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SDF4NA100SXH

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 9.2. Size:168K  solitron
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SDF4NA100SXH

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 9.3. Size:165K  solitron
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Detailed specifications: SDF460JEC, SDF460JED, SDF4N100JAA, SDF4N100JAB, SDF4N60, SDF4N90JAA, SDF4N90JAB, SDF4NA100, AO4468, SDF50N40JAM, SDF50NA20GBF, SDF5N100JAA, SDF5N100JAB, SDF6N60JAA, SDF6N60JAB, SDF6N90, SDF6NA100SXH

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