All MOSFET. AUIRFI4905 Datasheet

 

AUIRFI4905 Datasheet and Replacement


   Type Designator: AUIRFI4905
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 74 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 180 nC
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-220AB
 

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AUIRFI4905 Datasheet (PDF)

 ..1. Size:242K  international rectifier
 auirfi4905.pdf pdf_icon

AUIRFI4905

PD - 97765AAUTOMOTIVE GRADEAUIRFI4905FeaturesHEXFET Power MOSFET Advanced Planar Technology P-Channel MOSFETD Low On-ResistanceV(BR)DSS-55V Dynamic dV/dT RatingRDS(on) max. 175C Operating Temperature 0.02G Fast SwitchingID-74AS Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 8.1. Size:235K  international rectifier
 auirfi3205.pdf pdf_icon

AUIRFI4905

PD - 97764AUTOMOTIVE GRADEAUIRFI3205FeaturesHEXFET Power MOSFET Advanced Planar Technology Low On-ResistanceV(BR)DSS55V Isolated Package High Voltage Isolation = 2.5KVRMSRDS(on) max.0.008 Sink to Lead Creepage Distance = 4.8mm 175C Operating TemperatureID64A Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualifi

 8.2. Size:217K  international rectifier
 auirfiz34n.pdf pdf_icon

AUIRFI4905

PD - 97778AUTOMOTIVE GRADEAUIRFIZ34NFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance V(BR)DSS 55Vl Isolated PackageRDS(on) max. 40ml High Voltage Isolation = 2.5KVRMSl Sink to Lead Creepage Distantce = 4.8mmID 21Al 175C Operating Temperaturel Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Automotive Qualified*DescriptionSpe

 8.3. Size:214K  international rectifier
 auirfiz44n.pdf pdf_icon

AUIRFI4905

AUTOMOTIVE GRADEPD - 97767AUIRFIZ44NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSS 55Vl Isolated Packagel High Voltage Isolation = 2.5KVRMSRDS(on) max. 24ml Sink to Lead Creepage Distantce = 4.8mml 175C Operating TemperatureID 31Al Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Automotive Qualified*DescriptionS

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History: SL4N65D

Keywords - AUIRFI4905 MOSFET datasheet

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