SDF50NA20GBF Specs and Replacement

Type Designator: SDF50NA20GBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 max nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: NA

SDF50NA20GBF substitution

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SDF50NA20GBF datasheet

 5.1. Size:143K  solitron
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SDF50NA20GBF

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 8.1. Size:149K  solitron
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SDF50NA20GBF

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Detailed specifications: SDF4N100JAA, SDF4N100JAB, SDF4N60, SDF4N90JAA, SDF4N90JAB, SDF4NA100, SDF4NA100SXH, SDF50N40JAM, IRFZ44N, SDF5N100JAA, SDF5N100JAB, SDF6N60JAA, SDF6N60JAB, SDF6N90, SDF6NA100SXH, SDF75NA20GBN, SDF85NA50HI

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.