All MOSFET. AUIRLR2905ZTR Datasheet

 

AUIRLR2905ZTR Datasheet and Replacement


   Type Designator: AUIRLR2905ZTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO-252
 

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AUIRLR2905ZTR Datasheet (PDF)

 ..1. Size:273K  international rectifier
 auirlr2905ztr.pdf pdf_icon

AUIRLR2905ZTR

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot

 3.1. Size:660K  infineon
 auirlr2905z.pdf pdf_icon

AUIRLR2905ZTR

AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc

 4.1. Size:238K  international rectifier
 auirlr2905tr.pdf pdf_icon

AUIRLR2905ZTR

AUIRLR2905AUTOMOTIVE GRADEAUIRLU2905 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate DriveDV(BR)DSS Low On-Resistance 55V Dynamic dV/dT RatingRDS(on) max.27m 175C Operating Temperature G Fast SwitchingID42AS Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Autom

 5.1. Size:230K  international rectifier
 auirlr2908.pdf pdf_icon

AUIRLR2905ZTR

PD - 97734AUTOMOTIVE GRADEAUIRLR2908FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyD V(BR)DSSl Logic-Level Gate Drive 80Vl Low On-ResistanceRDS(on) typ.22.5ml 175C Operating Temperaturemax 28ml Fast SwitchingGl Fully Avalanche RatedID (Silicon Limited)39Al Repetitive Avalanche AllowedSID (Package Limited)30Aup to Tjmaxl Lead-Free,

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History: ZVN0545GTC

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