All MOSFET. AUIRLSL4030 Datasheet

 

AUIRLSL4030 MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRLSL4030

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 180 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 87 nC

Rise Time (tr): 330 nS

Drain-Source Capacitance (Cd): 670 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0043 Ohm

Package: TO-262

AUIRLSL4030 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRLSL4030 Datasheet (PDF)

1.1. auirlsl4030.pdf Size:264K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 Features AUIRLSL4030 l Optimized for Logic Level Drive HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS 100V l 175°C Operating Temperature RDS(on) typ. l Fast Switching 3.4mΩ l Repetitive Avalanche Allowed up to Tjmax G max. 4.3m Ω l Lead-Free, RoHS Compliant l Automotive Qualified * ID 180A

4.1. auirls3114z.pdf Size:238K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET® Power MOSFET Features VDSS 40V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 3.8m Ω l Enhanced dV/dT and dI/dT capability max. 4.9mΩ l 175°C Operating Temperature G l Fast Switching ID (Silicon Limited) 122A l Repetitive Avalanche Allowed up to Tjmax S ID (Wirebond Limited) 56A l Lead-Free, RoHS

 5.1. auirl7766m2tr.pdf Size:228K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97648 AUIRL7766M2TR AUTOMOTIVE GRADE AUIRL7766M2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 100V • Advanced Process Technology • Optimized for Automotive DC-DC and RDS(on) typ. 8.0mΩ other Heavy Load Applications max. • Logic Level Gate Drive 10mΩ • Exceptionally Small Footprint and Low Profile ID (Silicon Limited) 51A • High Power Density Qg 44nC

5.2. auirlz24nl auirlz24ns.pdf Size:271K _international_rectifier

AUIRLSL4030
AUIRLSL4030

AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET® Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175°C Operating Temperature RDS(on) max. 0.06 Ω l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application

 5.3. auirlr024ntr.pdf Size:312K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175°C Operating Temperature RDS(on) max. 0.065Ω Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

5.4. auirl7732s2tr1.pdf Size:216K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97635A AUTOMOTIVE GRADE AUIRL7732S2TR AUIRL7732S2TR1 DirectFET® Power MOSFET ‚ • Logic Level V(BR)DSS 40V • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ. 5.0mΩ other Heavy Load Applications max. 6.6mΩ • Exceptionally Small Footprint and Low Profile ID (Silicon Limited) • High Power Density 58A • Low Parasitic Pa

 5.5. auirl7736m2tr.pdf Size:230K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET® Power MOSFET ‚ • Logic Level V(BR)DSS 40V • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and RDS(on) typ. 2.2mΩ other Heavy Load Applications max. 3.0mΩ • Exceptionally Small Footprint and Low Profile • High Power Density ID (Silicon Limited) 112A • Low Parasitic

5.6. auirlu024z.pdf Size:260K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance RDS(on) typ. 46m ● 175°C Operating Temperature G ● Fast Switching max. 58m ● Repetitive Avalanche Allowed up to Tjmax S ID 16A ● Lead-Free, RoHS Compliant ● Automotive Qualified * D D

5.7. auirl3705zstrl.pdf Size:378K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 96345 AUTOMOTIVE GRADE AUIRL3705Z AUIRL3705ZS AUIRL3705ZL Features HEXFET® Power MOSFET l Logic Level V(BR)DSS 55V D l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 6.5mΩ l 175°C Operating Temperature l Fast Switching max. 8.0mΩ G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 86A l Lead-Free, RoHS Compliant S l Automotiv

5.8. auirll024z.pdf Size:228K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97762 AUTOMOTIVE GRADE AUIRLL024Z HEXFET® Power MOSFET Features ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 150°C Operating Temperature RDS(on) typ. 48m ● Fast Switching G max. 60m ● Repetitive Avalanche Allowed up to Tjmax S ID 5.0A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description D Specifically de

5.9. auirlr3410trl.pdf Size:246K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET® Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175°C Operating Temperature Fast Switching RDS(on) max. 105mΩ G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica

5.10. auirlr2905ztr.pdf Size:273K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot

5.11. auirl1404zstrl.pdf Size:375K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS AUIRL1404ZL Features HEXFET® Power MOSFET l Logic Level l Advanced Process Technology V(BR)DSS 40V D l Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching max. 3.1mΩ l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

5.12. auirlr2703tr.pdf Size:276K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive • Low On-Resistance D • Dynamic dV/dT Rating V(BR)DSS 30V • 175°C Operating Temperature RDS(on) max. 45m Ω • Fast Switching G ID (Silicon Limited) • Fully Avalanche Rated 23A • Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20

5.13. auirlr2905tr.pdf Size:238K _international_rectifier

AUIRLSL4030
AUIRLSL4030

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom

5.14. auirlr3705ztr.pdf Size:287K _international_rectifier

AUIRLSL4030
AUIRLSL4030

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 8.0mΩ ● Fast Switching G ID (Silicon Limited) 89A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automotiv

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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