SDF6NA100SXH Specs and Replacement

Type Designator: SDF6NA100SXH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 max nS

Cossⓘ - Output Capacitance: 325 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO3

SDF6NA100SXH substitution

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SDF6NA100SXH datasheet

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Detailed specifications: SDF4NA100SXH, SDF50N40JAM, SDF50NA20GBF, SDF5N100JAA, SDF5N100JAB, SDF6N60JAA, SDF6N60JAB, SDF6N90, IRF540, SDF75NA20GBN, SDF85NA50HI, SDF85NA50JD, SDF9130JAA, SDF9130JAB, SDF9140, SDF9230JAA, SDF9230JAB

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