MTB20N20E MOSFET Datasheet: N-Ch, 200V, 20A. Full specification with pinout and replacement list

MTB20N20E Specs and Replacement

Type Designator: MTB20N20E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 86 nS

Cossⓘ - Output Capacitance: 378 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: D2PAK

MTB20N20E substitution

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MTB20N20E datasheet

..1. Size:222K motorola
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m... See More ⇒

0.1. Size:258K motorola
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8.1. Size:366K cystek
mtb20n04j3.pdf pdf_icon

Spec. No. C978J3 Issued Date 2015.01.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB20N04J3 ID@VGS=10V, TC=25 C 23A ID@VGS=10V, TC=100 C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package ... See More ⇒

8.2. Size:367K cystek
mtb20n03aq8.pdf pdf_icon

Spec. No. C737Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2012.03.01 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03AQ8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m (typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best ... See More ⇒