MTB20N20E
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTB20N20E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 54
nC
trⓘ -
Время нарастания: 86
ns
Cossⓘ - Выходная емкость: 378
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16
Ohm
Тип корпуса:
D2PAK
Аналог (замена) для MTB20N20E
MTB20N20E
Datasheet (PDF)
..1. Size:222K motorola
mtb20n20e.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB20N20E/DDesigner's Data SheetMTB20N20ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.16 OHMthan any existing surface m
0.1. Size:258K motorola
mtb20n20erev2x.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB20N20E/DDesigner's Data SheetMTB20N20ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.16 OHMthan any existing surface m
8.1. Size:366K cystek
mtb20n04j3.pdf 
Spec. No. : C978J3 Issued Date : 2015.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB20N04J3 ID@VGS=10V, TC=25C 23A ID@VGS=10V, TC=100C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package
8.2. Size:367K cystek
mtb20n03aq8.pdf 
Spec. No. : C737Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.03.01 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03AQ8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m(typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
8.3. Size:498K cystek
mtb20n06kj3.pdf 
Spec. No. : C103J3 Issued Date : 2015.12.31 CYStech Electronics Corp. Revised Date : 2018.04.12 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06KJ3 ID@VGS=10V, TC=25C 38A ID@VGS=10V, TA=25C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m(typ)Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m(typ)RDS(ON)@VGS=4V, ID=4A 17.2 m(typ) Low On Resistance
8.4. Size:312K cystek
mtb20n06j3.pdf 
Spec. No. : C925J3 Issued Date : 2013.08.13 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06J3 ID 42ARDS(ON)@VGS=10V, ID=20A 14.6 m(typ)RDS(ON)@VGS=4.5V, ID=20A 16.7 m(typ)Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic
8.5. Size:331K cystek
mtb20n03q8.pdf 
Spec. No. : C396Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2014.02.14 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03Q8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 22.3 m(typ) Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best c
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