FDP4D5N10C PDF and Equivalents Search

 

FDP4D5N10C Specs and Replacement

Type Designator: FDP4D5N10C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 2330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220

FDP4D5N10C substitution

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FDP4D5N10C datasheet

 ..1. Size:970K  onsemi
 fdp4d5n10c fdpf4d5n10c.pdf pdf_icon

FDP4D5N10C

www.onsemi.com FDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 m Features General Description This N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 A Semiconductor s advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrr incorporates Shielded Gate technology. This process has b... See More ⇒

 ..2. Size:257K  inchange semiconductor
 fdp4d5n10c.pdf pdf_icon

FDP4D5N10C

isc N-Channel MOSFET Transistor FDP4D5N10C FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒

Detailed specifications: AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E , MTB33N10E , FDP2D3N10C , 18N50 , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C .

Keywords - FDP4D5N10C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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