All MOSFET. FDP4D5N10C Datasheet

 

FDP4D5N10C MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDP4D5N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 2330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-220

 FDP4D5N10C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP4D5N10C Datasheet (PDF)

 ..1. Size:970K  onsemi
 fdp4d5n10c fdpf4d5n10c.pdf

FDP4D5N10C FDP4D5N10C

www.onsemi.comFDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has b

 ..2. Size:257K  inchange semiconductor
 fdp4d5n10c.pdf

FDP4D5N10C FDP4D5N10C

isc N-Channel MOSFET Transistor FDP4D5N10CFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

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History: FDS4435

 

 
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