All MOSFET. FDP4D5N10C Datasheet

 

FDP4D5N10C Datasheet and Replacement


   Type Designator: FDP4D5N10C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 48 nC
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 2330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-220
 

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FDP4D5N10C Datasheet (PDF)

 ..1. Size:970K  onsemi
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FDP4D5N10C

www.onsemi.comFDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has b

 ..2. Size:257K  inchange semiconductor
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FDP4D5N10C

isc N-Channel MOSFET Transistor FDP4D5N10CFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Datasheet: AUIRLU024Z , AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E , MTB33N10E , FDP2D3N10C , 75N75 , FQI70N08 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C .

Keywords - FDP4D5N10C MOSFET datasheet

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