All MOSFET. FQI70N08 Datasheet

 

FQI70N08 Datasheet and Replacement


   Type Designator: FQI70N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: I2PAK
 

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FQI70N08 Datasheet (PDF)

 ..1. Size:678K  fairchild semi
 fqb70n08 fqi70n08.pdf pdf_icon

FQI70N08

August 2000TMQFETQFETQFETQFETFQB70N08 / FQI70N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 180 pF)This advanced technology

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