FQI70N08 PDF and Equivalents Search

 

FQI70N08 Specs and Replacement

Type Designator: FQI70N08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 155 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: I2PAK

FQI70N08 substitution

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FQI70N08 datasheet

 ..1. Size:678K  fairchild semi
 fqb70n08 fqi70n08.pdf pdf_icon

FQI70N08

August 2000 TM QFET QFET QFET QFET FQB70N08 / FQI70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 180 pF) This advanced technology... See More ⇒

Detailed specifications: AUIRLZ24NL , AUIRLZ24NS , AUXFS4409 , MTP15N15 , MTB20N20E , MTB33N10E , FDP2D3N10C , FDP4D5N10C , 20N50 , 2SK4145 , MTP33N10E , BUZ172 , FCB199N65S3 , FCP650N80Z , FCPF099N65S3 , FDPF2D3N10C , FDPF4D5N10C .

Keywords - FQI70N08 MOSFET specs

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