IPB015N04N MOSFET Datasheet: N-Ch, 40V, 120A. Full specification with pinout and replacement list

IPB015N04N Specs and Replacement

Type Designator: IPB015N04N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 4000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: D2PAK TO-263

IPB015N04N substitution

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IPB015N04N datasheet

..1. Size:670K infineon
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..2. Size:257K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

0.1. Size:670K infineon
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0.2. Size:673K infineon
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