IPB015N04N MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB015N04N
Marking Code: 015N04N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 188 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 4000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: D2PAK TO-263
IPB015N04N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB015N04N Datasheet (PDF)
ipp015n04n ipb015n04n.pdf
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ipb015n04n.pdf
Isc N-Channel MOSFET Transistor IPB015N04NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
ipp015n04n6 ipb015n04n6.pdf
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ipp015n04ng ipb015n04ng.pdf
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ipb015n04l.pdf
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ipb015n04lg ipb015n04l .pdf
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ipb015n04l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB015N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
