IPB015N04N
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB015N04N
Marking Code: 015N04N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 188
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 4000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015
Ohm
Package:
D2PAK
TO-263
IPB015N04N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB015N04N
Datasheet (PDF)
..1. Size:670K infineon
ipp015n04n ipb015n04n.pdf 
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..2. Size:257K inchange semiconductor
ipb015n04n.pdf
Isc N-Channel MOSFET Transistor IPB015N04NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
0.1. Size:670K infineon
ipp015n04n6 ipb015n04n6.pdf
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0.2. Size:673K infineon
ipp015n04ng ipb015n04ng.pdf
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5.1. Size:440K infineon
ipb015n04l.pdf
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5.3. Size:252K inchange semiconductor
ipb015n04l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB015N04LFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
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