All MOSFET. IPB054N06N3 Datasheet

 

IPB054N06N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB054N06N3
   Marking Code: 054N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: D2PAK TO-263

 IPB054N06N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB054N06N3 Datasheet (PDF)

 ..1. Size:691K  infineon
ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf

IPB054N06N3 IPB054N06N3

pe IPB054N06N3 G IPP057N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 ..2. Size:258K  inchange semiconductor
ipb054n06n3.pdf

IPB054N06N3 IPB054N06N3

Isc N-Channel MOSFET Transistor IPB054N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 0.1. Size:689K  infineon
ipb054n06n3g ipp057n06n3g.pdf

IPB054N06N3 IPB054N06N3

pe IPB054N06N3 G IPP057N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 6.1. Size:526K  infineon
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf

IPB054N06N3 IPB054N06N3

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

 6.2. Size:1022K  infineon
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf

IPB054N06N3 IPB054N06N3

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1

 6.3. Size:258K  inchange semiconductor
ipb054n08n3g.pdf

IPB054N06N3 IPB054N06N3

Isc N-Channel MOSFET Transistor IPB054N08N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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