IPB054N06N3 datasheet, подбор замены

 ..1. Size:691K  infineon
 ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf 

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 ..2. Size:258K  inchange semiconductor
 ipb054n06n3.pdf 

Isc N-Channel MOSFET Transistor IPB054N06N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 0.1. Size:689K  infineon
 ipb054n06n3g ipp057n06n3g.pdf 

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

 6.1. Size:526K  infineon
 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf 

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia

 6.2. Size:1022K  infineon
 ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf 

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features V 80 V DS Q ' 381>>5?B=1

 6.3. Size:258K  inchange semiconductor
 ipb054n08n3g.pdf 

Isc N-Channel MOSFET Transistor IPB054N08N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source