All MOSFET. IPB065N10N3 Datasheet

 

IPB065N10N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB065N10N3
   Marking Code: 065N10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 51 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 646 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: D2PAK TO-263

 IPB065N10N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB065N10N3 Datasheet (PDF)

 ..1. Size:258K  inchange semiconductor
ipb065n10n3.pdf

IPB065N10N3
IPB065N10N3

Isc N-Channel MOSFET Transistor IPB065N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 0.1. Size:1157K  infineon
ipb065n10n3g.pdf

IPB065N10N3
IPB065N10N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GData SheetRev. 2.0FinalPower Management & MultimarketOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GDPAK1 DescriptionFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175

 6.1. Size:637K  infineon
ipb065n15n3g.pdf

IPB065N10N3
IPB065N10N3

IPB065N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1

 7.1. Size:614K  infineon
ipb065n03l.pdf

IPB065N10N3
IPB065N10N3

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 7.2. Size:738K  infineon
ipb065n06lg ipp065n06lg.pdf

IPB065N10N3
IPB065N10N3

IPB065N06L G IPP065N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R m , ?> =1G P ( 381>>581>35=5>C

 7.3. Size:242K  inchange semiconductor
ipb065n03l.pdf

IPB065N10N3
IPB065N10N3

isc N-Channel MOSFET Transistor IPB065N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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