All MOSFET. IPB067N08N3 Datasheet

 

IPB067N08N3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB067N08N3

Marking Code: 067N08N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 136 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 42 nC

Rise Time (tr): 66 nS

Drain-Source Capacitance (Cd): 780 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0067 Ohm

Package: D2PAK TO-263

IPB067N08N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB067N08N3 Datasheet (PDF)

0.1. ipp070n08n3 ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf Size:1021K _infineon

IPB067N08N3
IPB067N08N3

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

0.2. ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf Size:1013K _infineon

IPB067N08N3
IPB067N08N3

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 0.3. ipb067n08n3.pdf Size:258K _inchange_semiconductor

IPB067N08N3
IPB067N08N3

Isc N-Channel MOSFET Transistor IPB067N08N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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