IPB067N08N3 - Даташиты. Аналоги. Основные параметры

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

Isc N-Channel MOSFET Transistor IPB067N08N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

pe %% # ! % # ! % (>.;?6?@%>EFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- m - @? >2H Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86? 7B66 244@

IPB06N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.9mDS(on),max Qualified according to JEDEC1) for target applicationsI 50 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO263-3-2 Superior thermal res

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GData SheetRev. 2.0FinalPower Management & MultimarketOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GDPAK1 DescriptionFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175

IPB065N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1

IPB060N15N5MOSFETD-PAK 7pinOptiMOS5 Power-Transistor, 150 VFeatures Featurestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Q )rr1 175 C operating temperature Pb-free lead plating; RoHS compliant7 Qualified according to JEDEC1) for target application Ideal for high-f

IPB065N06L G IPP065N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R m , ?> =1G P ( 381>>581>35=5>C

isc N-Channel MOSFET Transistor IPB065N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

Isc N-Channel MOSFET Transistor IPB065N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V