IPB107N20N3 Datasheet and Replacement. Cross Reference Search

IPB107N20N3 Datasheet (PDF)

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isc N-Channel MOSFET Transistor IPB107N20N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

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IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

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IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE

4.2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB107N20NAFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: IPB054N06N3 , IPB05CN10N , IPB065N10N3 , IPB067N08N3 , IPB081N06L3 , IPB083N10N3 , IPB083N15N5LF , IPB097N08N3 , IRF540N , IPB110N20N3LF , IPB26CN10N , IPB34CN10N , IPB530N15N3 , IPB60R040C7 , IPB60R060C7 , IPB60R060P7 , IPB60R080P7 .