IPB107N20N3 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPB107N20N3
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 88 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 401 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0107 Ohm
Тип корпуса: D2PAK TO-263
Аналог (замена) для IPB107N20N3
IPB107N20N3 Datasheet (PDF)
ipb107n20n3.pdf

isc N-Channel MOSFET Transistor IPB107N20N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl
ipb107n20na ipp110n20na.pdf

IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE
ipb107n20na.pdf

Isc N-Channel MOSFET Transistor IPB107N20NAFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Другие MOSFET... IPB054N06N3 , IPB05CN10N , IPB065N10N3 , IPB067N08N3 , IPB081N06L3 , IPB083N10N3 , IPB083N15N5LF , IPB097N08N3 , IRF540 , IPB110N20N3LF , IPB26CN10N , IPB34CN10N , IPB530N15N3 , IPB60R040C7 , IPB60R060C7 , IPB60R060P7 , IPB60R080P7 .
History: CJ3139KDW | FDS5170N7 | CEB6060N | IXTQ96N15P
History: CJ3139KDW | FDS5170N7 | CEB6060N | IXTQ96N15P



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