All MOSFET. IPB530N15N3 Datasheet

 

IPB530N15N3 Datasheet and Replacement


   Type Designator: IPB530N15N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: D2PAK TO-263
 

 IPB530N15N3 substitution

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IPB530N15N3 Datasheet (PDF)

 ..1. Size:983K  infineon
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IPB530N15N3

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 0.1. Size:961K  infineon
 ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPB530N15N3

IPB530N15N3 G IPD530N15N3 GIPI530N15N3 G IPP530N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 53 mW Excellent gate charge x R product (FOM)DS(on)ID 21 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to

Datasheet: IPB081N06L3 , IPB083N10N3 , IPB083N15N5LF , IPB097N08N3 , IPB107N20N3 , IPB110N20N3LF , IPB26CN10N , IPB34CN10N , IRFZ44 , IPB60R040C7 , IPB60R060C7 , IPB60R060P7 , IPB60R080P7 , IPB60R099C7 , IPB60R099P7 , IPB60R120P7 , IPB60R160P6 .

Keywords - IPB530N15N3 MOSFET datasheet

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