IPB530N15N3 MOSFET Datasheet: N-Ch, 150V, 21A. Full specification with pinout and replacement list

IPB530N15N3 Specs and Replacement

Type Designator: IPB530N15N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 106 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: D2PAK TO-263

IPB530N15N3 substitution

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IPB530N15N3 datasheet

..1. Size:983K infineon
ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf pdf_icon

# ! ! # ! ! # ! ! ## ! ! TM # A0A= 2?E #2=@86? !C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH ... See More ⇒

0.1. Size:961K infineon
ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 53 mW Excellent gate charge x R product (FOM) DS(on) ID 21 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to ... See More ⇒

Detailed specifications: IPB081N06L3 , IPB083N10N3 , IPB083N15N5LF , IPB097N08N3 , IPB107N20N3 , IPB110N20N3LF , IPB26CN10N , IPB34CN10N , IRFZ44 , IPB60R040C7 , IPB60R060C7 , IPB60R060P7 , IPB60R080P7 , IPB60R099C7 , IPB60R099P7 , IPB60R120P7 , IPB60R160P6 .