IPP60R360P7 Specs and Replacement
Type Designator: IPP60R360P7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ -
Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO-220
- MOSFET ⓘ Cross-Reference Search
IPP60R360P7 datasheet
..1. Size:1689K infineon
ipp60r360p7.pdf 
IPP60R360P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ ... See More ⇒
..2. Size:272K inchange semiconductor
ipp60r360p7.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R360P7 IIPP60R360P7 FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ea... See More ⇒
7.1. Size:1282K infineon
ipp60r380e6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an... See More ⇒
7.2. Size:3084K infineon
ipw60r330p6 ipb60r330p6 ipp60r330p6 ipa60r330p6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R330P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R330P6, IPB60R330P6, IPP60R330P6, IPA60R330P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒
7.3. Size:2739K infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor... See More ⇒
7.5. Size:572K infineon
ipp60r385cp.pdf 
IPP60R385CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 7!... See More ⇒
7.6. Size:2866K infineon
ipa60r330p6 ipp60r330p6 ipw60r330p6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R330P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R330P6, IPP60R330P6, IPA60R330P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒
7.7. Size:1368K infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according... See More ⇒
7.8. Size:2540K infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf 
IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒
7.9. Size:943K infineon
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.6 Final Power Management & Multimarket C lMO e n i t I I I D O O D 1 Descripti n t b tab C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n 2 pi neee b In ine n e n l ie C... See More ⇒
7.10. Size:245K inchange semiconductor
ipp60r380p6.pdf 
isc N-Channel MOSFET Transistor IPP60R380P6 IIPP60R380P6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
7.11. Size:244K inchange semiconductor
ipp60r330p6.pdf 
isc N-Channel MOSFET Transistor IPP60R330P6 IIPP60R330P6 FEATURES Static drain-source on-resistance RDS(on) 0.33 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
7.12. Size:245K inchange semiconductor
ipp60r380c6.pdf 
isc N-Channel MOSFET Transistor IPP60R380C6 IIPP60R380C6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
7.13. Size:246K inchange semiconductor
ipp60r385cp.pdf 
isc N-Channel MOSFET Transistor IPP60R385CP IIPP60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: IPB60R180P7, IPB60R190P6, IPB60R230P6, IPB60R280P7, IPB60R330P6, IPB60R360P7, IPB60R380P6, IPB60R600P6, IRF630, IPS110N12N3, IPS12CN10L, IPS60R3K4CE, IPS60R400CE, IPS65R400CE, IPS70R1K4CE, IPS70R950CE, IPU050N03L
Keywords - IPP60R360P7 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.