Справочник MOSFET. IPP60R360P7

 

IPP60R360P7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP60R360P7
   Маркировка: 60R360P7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 10 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для IPP60R360P7

 

 

IPP60R360P7 Datasheet (PDF)

 ..1. Size:1689K  infineon
ipp60r360p7.pdf

IPP60R360P7
IPP60R360P7

IPP60R360P7MOSFETPG-TO 220600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 ..2. Size:272K  inchange semiconductor
ipp60r360p7.pdf

IPP60R360P7
IPP60R360P7

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP60R360P7IIPP60R360P7FEATURESStatic drain-source on-resistance:RDS(on) 0.36Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET with excellentea

 7.1. Size:1282K  infineon
ipp60r380e6.pdf

IPP60R360P7
IPP60R360P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 7.2. Size:3084K  infineon
ipw60r330p6 ipb60r330p6 ipp60r330p6 ipa60r330p6.pdf

IPP60R360P7
IPP60R360P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R330P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R330P6, IPB60R330P6, IPP60R330P6,IPA60R330P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.3. Size:2739K  infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf

IPP60R360P7
IPP60R360P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

 7.4. Size:1201K  infineon
ipp60r380c6.pdf

IPP60R360P7
IPP60R360P7

MOSFET+ =L9D - PA

 7.5. Size:572K  infineon
ipp60r385cp.pdf

IPP60R360P7
IPP60R360P7

IPP60R385CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220 ::7!

 7.6. Size:2866K  infineon
ipa60r330p6 ipp60r330p6 ipw60r330p6.pdf

IPP60R360P7
IPP60R360P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R330P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R330P6, IPP60R330P6, IPA60R330P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.7. Size:1368K  infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

IPP60R360P7
IPP60R360P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 7.8. Size:2540K  infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf

IPP60R360P7
IPP60R360P7

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

 7.9. Size:943K  infineon
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf

IPP60R360P7
IPP60R360P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

 7.10. Size:245K  inchange semiconductor
ipp60r380p6.pdf

IPP60R360P7
IPP60R360P7

isc N-Channel MOSFET Transistor IPP60R380P6IIPP60R380P6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 7.11. Size:244K  inchange semiconductor
ipp60r330p6.pdf

IPP60R360P7
IPP60R360P7

isc N-Channel MOSFET Transistor IPP60R330P6IIPP60R330P6FEATURESStatic drain-source on-resistance:RDS(on) 0.33Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 7.12. Size:245K  inchange semiconductor
ipp60r380c6.pdf

IPP60R360P7
IPP60R360P7

isc N-Channel MOSFET Transistor IPP60R380C6IIPP60R380C6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 7.13. Size:246K  inchange semiconductor
ipp60r385cp.pdf

IPP60R360P7
IPP60R360P7

isc N-Channel MOSFET Transistor IPP60R385CPIIPP60R385CPFEATURESStatic drain-source on-resistance:RDS(on) 0.385Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

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