All MOSFET. IPS65R400CE Datasheet

 

IPS65R400CE Datasheet and Replacement


   Type Designator: IPS65R400CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: IPAK TO-251
 

 IPS65R400CE substitution

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IPS65R400CE Datasheet (PDF)

 ..1. Size:1094K  infineon
ipd65r400ce ips65r400ce.pdf pdf_icon

IPS65R400CE

IPD65R400CE, IPS65R400CEMOSFETDPAK IPAK SL650V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE series combines the 13experience of the leading SJ MOSFET supplier with high class innovation.The resulting de

 ..2. Size:261K  inchange semiconductor
ips65r400ce.pdf pdf_icon

IPS65R400CE

isc N-Channel MOSFET Transistor IPS65R400CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:979K  1
ips65r650ce.pdf pdf_icon

IPS65R400CE

IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

 8.2. Size:1733K  infineon
ips65r1k0ce.pdf pdf_icon

IPS65R400CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K0CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

Datasheet: IPB60R360P7 , IPB60R380P6 , IPB60R600P6 , IPP60R360P7 , IPS110N12N3 , IPS12CN10L , IPS60R3K4CE , IPS60R400CE , K4145 , IPS70R1K4CE , IPS70R950CE , IPU050N03L , IPU060N03L , IPU075N03L , IPU135N03L , IPU60R3K4CE , IRF135S203 .

History: IRFP3306

Keywords - IPS65R400CE MOSFET datasheet

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