All MOSFET. IPS65R400CE Datasheet

 

IPS65R400CE MOSFET. Datasheet pdf. Equivalent

Type Designator: IPS65R400CE

Marking Code: 65S400CE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 118 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 15.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 41 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: IPAK, TO-251

IPS65R400CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPS65R400CE Datasheet (PDF)

0.1. ipd65r400ce ips65r400ce.pdf Size:1094K _infineon

IPS65R400CE
IPS65R400CE

IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de

8.1. ips65r1k0ce.pdf Size:1733K _infineon

IPS65R400CE
IPS65R400CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 650V CoolMOS™ CE Power Transistor IPS65R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS™ CE Power Transistor IPS65R1K0CE IPAK SL 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

8.2. ips65r1k5ce.pdf Size:1727K _infineon

IPS65R400CE
IPS65R400CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 650V CoolMOS™ CE Power Transistor IPS65R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS™ CE Power Transistor IPS65R1K5CE IPAK SL 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 8.3. ips65r950c6.pdf Size:651K _infineon

IPS65R400CE
IPS65R400CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPS65R950C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPS65R950C6 IPAK SL 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pio

8.4. ips65r1k4c6.pdf Size:651K _infineon

IPS65R400CE
IPS65R400CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPS65R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPS65R1K4C6 IPAK SL 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

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