IPS65R400CE. Аналоги и основные параметры

Наименование производителя: IPS65R400CE

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 118 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 41 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm

Тип корпуса: IPAK TO-251

Аналог (замена) для IPS65R400CE

- подборⓘ MOSFET транзистора по параметрам

 

IPS65R400CE даташит

 ..1. Size:1094K  infineon
 ipd65r400ce ips65r400ce.pdf pdf_icon

IPS65R400CE

IPD65R400CE, IPS65R400CE MOSFET DPAK IPAK SL 650V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE series combines the 1 3 experience of the leading SJ MOSFET supplier with high class innovation. The resulting de

 ..2. Size:261K  inchange semiconductor
 ips65r400ce.pdf pdf_icon

IPS65R400CE

isc N-Channel MOSFET Transistor IPS65R400CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.1. Size:979K  1
 ips65r650ce.pdf pdf_icon

IPS65R400CE

IPS65R650CE MOSFET IPAK SL 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h

 8.2. Size:1733K  infineon
 ips65r1k0ce.pdf pdf_icon

IPS65R400CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPS65R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPS65R1K0CE IPAK SL 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

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