IRL60S216 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL60S216
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 195 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 170 nC
trⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 1260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm
Package: D2PAK TO-263
IRL60S216 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL60S216 Datasheet (PDF)
irl60s216 irl60sl216.pdf
IR MOSFET StrongIRFET IRL60S216 IRL60SL216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.6mBattery powered circuits Half-bridge and full-bridge topologies max 1.95mG Synchronous rectifier applications ID (Silicon Limited) 298A R
irl60s216.pdf
Isc N-Channel MOSFET Transistor IRL60S216FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
irl60sc216.pdf
IRL60SC216MOSFETD-PAK 7pinIR MOSFET - StrongIRFETFeaturestab Very low RDS(on) Optimized for logic level drive High current carrying capability 175C operating temperature7 Optimized for broadest availability from distribution partners 654321Benefits Reduced conduction losses Increased power density Increased reliability vers
irl60b216.pdf
StrongIRFET IRL60B216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.5mBattery powered circuits max 1.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 305A Resonant mode power suppli
irl60hs118.pdf
IRL60HS118 Typical values (unless otherwise specified) Target Applications Wireless charging V V R (max )DSS GS DS(on) . Adapter 60V min. 20V max 17m@ 10V Telecom Q Q V g tot gd gs(th)5.3nC 2.1nC 1.7V Benefits Top View Higher power density designs Higher switching frequency D 1 6 D Uses OptiMOSTM5 Chip Reduced parts count
irl60b216.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL60B216IIRL60B216FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
