IRL60S216 - описание и поиск аналогов

 ..1. Size:692K  infineon
 irl60s216 irl60sl216.pdf 

IR MOSFET StrongIRFET IRL60S216 IRL60SL216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.6m Battery powered circuits Half-bridge and full-bridge topologies max 1.95m G Synchronous rectifier applications ID (Silicon Limited) 298A R

 ..2. Size:258K  inchange semiconductor
 irl60s216.pdf 

Isc N-Channel MOSFET Transistor IRL60S216 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 8.1. Size:972K  infineon
 irl60sc216.pdf 

IRL60SC216 MOSFET D -PAK 7pin IR MOSFET - StrongIRFET Features tab Very low R DS(on) Optimized for logic level drive High current carrying capability 175 C operating temperature 7 Optimized for broadest availability from distribution partners 6 5 4 3 2 1 Benefits Reduced conduction losses Increased power density Increased reliability vers

 9.1. Size:692K  international rectifier
 irl60b216.pdf 

StrongIRFET IRL60B216 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 1.5m Battery powered circuits max 1.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 305A Resonant mode power suppli

 9.2. Size:1078K  infineon
 irl60hs118.pdf 

IRL60HS118 Typical values (unless otherwise specified) Target Applications Wireless charging V V R (max ) DSS GS DS(on) . Adapter 60V min. 20V max 17m @ 10V Telecom Q Q V g tot gd gs(th) 5.3nC 2.1nC 1.7V Benefits Top View Higher power density designs Higher switching frequency D 1 6 D Uses OptiMOSTM5 Chip Reduced parts count

 9.3. Size:246K  inchange semiconductor
 irl60b216.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL60B216 IIRL60B216 FEATURES Static drain-source on-resistance RDS(on) 1.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM