All MOSFET. IXFY36N20X3 Datasheet


IXFY36N20X3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFY36N20X3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: DPAK, TO-252

IXFY36N20X3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IXFY36N20X3 Datasheet (PDF)

0.1. ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf Size:310K _ixys


VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3   RDS(on)    45m     IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V G S VDGR TJ = 25C to 150C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220

0.2. ixfy36n20x3.pdf Size:262K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IXFY36N20X3 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo


Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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