IXFY36N20X3 Datasheet. Specs and Replacement

Type Designator: IXFY36N20X3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: DPAK TO-252

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IXFY36N20X3 substitution

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IXFY36N20X3 datasheet

 ..1. Size:310K  ixys
 ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf pdf_icon

IXFY36N20X3

VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3 RDS(on) 45m IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220... See More ⇒

 ..2. Size:262K  inchange semiconductor
 ixfy36n20x3.pdf pdf_icon

IXFY36N20X3

Isc N-Channel MOSFET Transistor IXFY36N20X3 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

Detailed specifications: IRL60S216, IRLS3813, IXFH56N30X3, IXFP12N65X2, IXFP20N85X, IXFP36N20X3M, IXFP72N20X3M, IXFQ8N85X, 18N50, IXTA12N70X2, IXTP230N04T4M, MFT60N12T22FS, MMD60R580QRH, MTD300N20J3, NTHL040N65S3F, NVD4C05NT4G, IXTH12N70X2

Keywords - IXFY36N20X3 MOSFET specs

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