IXFY36N20X3 Specs and Replacement
Type Designator: IXFY36N20X3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: DPAK TO-252
IXFY36N20X3 substitution
IXFY36N20X3 Specs
ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf
VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3 RDS(on) 45m IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220... See More ⇒
ixfy36n20x3.pdf
Isc N-Channel MOSFET Transistor IXFY36N20X3 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒
Detailed specifications: IRL60S216 , IRLS3813 , IXFH56N30X3 , IXFP12N65X2 , IXFP20N85X , IXFP36N20X3M , IXFP72N20X3M , IXFQ8N85X , RFP50N06 , IXTA12N70X2 , IXTP230N04T4M , MFT60N12T22FS , MMD60R580QRH , MTD300N20J3 , NTHL040N65S3F , NVD4C05NT4G , IXTH12N70X2 .
Keywords - IXFY36N20X3 MOSFET specs
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