SDF9N100GAF-S Datasheet. Specs and Replacement

Type Designator: SDF9N100GAF-S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 max nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO254

SDF9N100GAF-S substitution

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Detailed specifications: SDF85NA50JD, SDF9130JAA, SDF9130JAB, SDF9140, SDF9230JAA, SDF9230JAB, SDF9240, SDF9N100GAF-D, IRFB4227, SDF9N100GAF-U, SDF9N100JEA-D, SDF9N100JEA-S, SDF9N100JEA-U, SDF9N100JEB-D, SDF9N100JEB-S, SDF9N100JEB-U, SDF9N100JEC-D

Keywords - SDF9N100GAF-S MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs