R6018JNX
MOSFET. Datasheet pdf. Equivalent
Type Designator: R6018JNX
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 72
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 7
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.286
Ohm
Package:
TO-220F
R6018JNX
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6018JNX
Datasheet (PDF)
..1. Size:2181K rohm
r6018jnx.pdf
R6018JNXDatasheetNch 600V 18A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.286ID18APD72W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationll
..2. Size:252K inchange semiconductor
r6018jnx.pdf
isc N-Channel MOSFET Transistor R6018JNXFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 286m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.1. Size:1172K rohm
r6018anj.pdf
Data Sheet10V Drive Nch MOSFET R6018ANJ Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High-speed switching.2.54 0.40.783) Wide SOA.2.75.08(1) Gate(1) (2) (3)4) Drive circuits can be simple. (2) Drain(3) Source5) Parallel use is easy. ApplicationSwitching Packaging specifi
9.2. Size:1063K rohm
r6018anx.pdf
R6018ANXNch 600V 18A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.27ID18APD50W(1)(2)(3) Features Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead
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