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R6018JNX Spec and Replacement


   Type Designator: R6018JNX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.286 Ohm
   Package: TO-220F

 R6018JNX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6018JNX Specs

 ..1. Size:2181K  rohm
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R6018JNX

R6018JNX Datasheet Nch 600V 18A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.286 ID 18A PD 72W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l l... See More ⇒

 ..2. Size:252K  inchange semiconductor
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R6018JNX

isc N-Channel MOSFET Transistor R6018JNX FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 286m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 9.1. Size:1172K  rohm
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R6018JNX

Data Sheet 10V Drive Nch MOSFET R6018ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 3) Wide SOA. 2.7 5.08 (1) Gate (1) (2) (3) 4) Drive circuits can be simple. (2) Drain (3) Source 5) Parallel use is easy. Application Switching Packaging specifi... See More ⇒

 9.2. Size:1063K  rohm
r6018anx.pdf pdf_icon

R6018JNX

R6018ANX Nch 600V 18A Power MOSFET Datasheet Outline VDSS 600V TO-220FM RDS(on) (Max.) 0.27 ID 18A PD 50W (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead... See More ⇒

Detailed specifications: IXTP230N04T4M , MFT60N12T22FS , MMD60R580QRH , MTD300N20J3 , NTHL040N65S3F , NVD4C05NT4G , IXTH12N70X2 , PSMN3R7-100BSE , 8N60 , SIHG47N60AEF , STD140N6F7 , STH140N6F7 , STP140N6F7 , SUP70060E , TK13A60W , VN1206N5 , VN1210N2 .

History: STD140N6F7 | JMSH1552PU

Keywords - R6018JNX MOSFET specs

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