WFD5N65L MOSFET PDF: N-Ch, 650V, 5A. Datasheet. Full specification with pinout and replacement list

WFD5N65L Specs and Replacement

   Type Designator: WFD5N65L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO-252

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WFD5N65L datasheet

..1. Size:255K winsemi
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WFD5N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 5.0A,650V,R (Max2.7 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced ... See More ⇒

..2. Size:262K inchange semiconductor
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Isc N-Channel MOSFET Transistor WFD5N65L FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

8.1. Size:487K winsemi
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WFD5N60B WFD5N60B WFD5N60B WFD5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.4 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒

8.2. Size:485K winsemi
wfd5n60c.pdf pdf_icon

WFD5N60C WFD5N60C WFD5N60C WFD5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,600V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced... See More ⇒