WFD5N65L MOSFET. Datasheet pdf. Equivalent
Type Designator: WFD5N65L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 33 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO-252
WFD5N65L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFD5N65L Datasheet (PDF)
1.1. wfd5n65l.pdf 
Size:262K _inchange_semiconductor
Isc N-Channel MOSFET Transistor WFD5N65L ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
4.1. wfd5n60c.pdf Size:485K _update_mosfet
WFD5N60C WFD5N60C WFD5N60C WFD5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced
4.2. wfd5n60b.pdf Size:487K _update_mosfet
WFD5N60B WFD5N60B WFD5N60B WFD5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
