All MOSFET. CJ1012-G Datasheet

 

CJ1012-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJ1012-G
   Marking Code: C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 750 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT-523

 CJ1012-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJ1012-G Datasheet (PDF)

 ..1. Size:131K  comchip
 cj1012-g.pdf

CJ1012-G CJ1012-G

MOSFETCJ1012-GN-ChannelRoHS DeviceSOT-523G : GateFeaturesS : SourceD : Drain - High-Side Switching.0.067(1.70)0.059(1.50)3 - Low On-Resistance.0.014(0.35)0.010(0.25)0.035(0.90) - Low Threshold.0.028(0.70) - Fast Switching Speed.1 20.020(0.50)TYP. - ESD protected up to 2KV.0.043(1.10)0.035(0.90)Mechanical data0.008(0.20)0.004(0.10) - Case:

 8.1. Size:2820K  jiangsu
 cj1012.pdf

CJ1012-G CJ1012-G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-523 700m@4.5V320V500mA 850m@2.5V1. GATE 2. SOURCE General Description 3. DRAIN 1 This Single N-Channel MOSFET has been designed using advanced 2Power Trench process to optimize the RDS(ON). FEATURE APP

 8.2. Size:363K  cn tech public
 tpcj1012.pdf

CJ1012-G CJ1012-G

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