All MOSFET. CJ1012-G Datasheet

 

CJ1012-G Datasheet and Replacement


   Type Designator: CJ1012-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT-523
 

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CJ1012-G Datasheet (PDF)

 ..1. Size:131K  comchip
 cj1012-g.pdf pdf_icon

CJ1012-G

MOSFETCJ1012-GN-ChannelRoHS DeviceSOT-523G : GateFeaturesS : SourceD : Drain - High-Side Switching.0.067(1.70)0.059(1.50)3 - Low On-Resistance.0.014(0.35)0.010(0.25)0.035(0.90) - Low Threshold.0.028(0.70) - Fast Switching Speed.1 20.020(0.50)TYP. - ESD protected up to 2KV.0.043(1.10)0.035(0.90)Mechanical data0.008(0.20)0.004(0.10) - Case:

 8.1. Size:2820K  jiangsu
 cj1012.pdf pdf_icon

CJ1012-G

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-523 700m@4.5V320V500mA 850m@2.5V1. GATE 2. SOURCE General Description 3. DRAIN 1 This Single N-Channel MOSFET has been designed using advanced 2Power Trench process to optimize the RDS(ON). FEATURE APP

 8.2. Size:363K  cn tech public
 tpcj1012.pdf pdf_icon

CJ1012-G

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Datasheet: STH140N6F7 , STP140N6F7 , SUP70060E , TK13A60W , VN1206N5 , VN1210N2 , WFD5N65L , CJ1012 , 60N06 , CJ2101 , CJ2102 , CJ2301 , CJ2301-HF , CJ2301S , CJ2302 , CJ2302S , CJ2303 .

History: IXFA36N20X3 | ME04N25G

Keywords - CJ1012-G MOSFET datasheet

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