CJ3134KW MOSFET. Datasheet pdf. Equivalent
Type Designator: CJ3134KW
Marking Code: 34K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT-323
CJ3134KW Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJ3134KW Datasheet (PDF)
cj3134kw.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ3134KW N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 380 m@4.5V20V 0.75Am450 @2.5V800m@1.8V1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Drivers:Relays, Solenoids, High-Side Switching Lamps, Hammers, Displays, Memories Low On-Resistance Battery Opera
cj3134k.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS CJ3134K N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m@ 4.5V20V 450m@2.5V0.75A 800m@1.8V1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switc
cj3134kdw.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ3134KDW Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 6380m@ 4.5V520V 450m@2.5V0.75A4800m@1.8V123FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch
cj3139k.pdf
P-Channel MOSFET ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE 3. DRAIN Lead Free Product is Acquired Load/Power Switching Surface Mount Package Inte
cj3139kdw.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ3139KDW Dual P-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 95 1 8 TYP GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Includi
cj3139kw.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETSCJ3139KW P-Channel Power MOSFETSOT-323 ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE GENERRAL DESCRIPTION 3. DRAIN This Single P-Channel MOSFET has been designed using advanced Power Trench process to opti
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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