CJ3134KW - Даташиты. Аналоги. Основные параметры

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ3134KW N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 380 m@4.5V20V 0.75Am450 @2.5V800m@1.8V1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Drivers:Relays, Solenoids, High-Side Switching Lamps, Hammers, Displays, Memories Low On-Resistance Battery Opera

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS CJ3134K N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m@ 4.5V20V 450m@2.5V0.75A 800m@1.8V1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switc

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ3134KDW Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 6380m@ 4.5V520V 450m@2.5V0.75A4800m@1.8V123FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch

P-Channel MOSFET ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE 3. DRAIN Lead Free Product is Acquired Load/Power Switching Surface Mount Package Inte

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ3139KDW Dual P-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 95 1 8 TYP GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Includi

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETSCJ3139KW P-Channel Power MOSFETSOT-323 ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE GENERRAL DESCRIPTION 3. DRAIN This Single P-Channel MOSFET has been designed using advanced Power Trench process to opti