CJ3139K
MOSFET. Datasheet pdf. Equivalent
Type Designator: CJ3139K
Marking Code: KD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 0.66
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5.8
nS
Cossⓘ -
Output Capacitance: 15
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52
Ohm
Package:
SOT-723
CJ3139K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJ3139K
Datasheet (PDF)
..1. Size:436K jiangsu
cj3139k.pdf
P-Channel MOSFET ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE 3. DRAIN Lead Free Product is Acquired Load/Power Switching Surface Mount Package Inte
0.1. Size:2229K jiangsu
cj3139kdw.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ3139KDW Dual P-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 95 1 8 TYP GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Includi
0.2. Size:2431K jiangsu
cj3139kw.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETSCJ3139KW P-Channel Power MOSFETSOT-323 ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE GENERRAL DESCRIPTION 3. DRAIN This Single P-Channel MOSFET has been designed using advanced Power Trench process to opti
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