All MOSFET. CJ3139K Datasheet

 

CJ3139K Datasheet and Replacement


   Type Designator: CJ3139K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT-723
 

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CJ3139K Datasheet (PDF)

 ..1. Size:436K  jiangsu
 cj3139k.pdf pdf_icon

CJ3139K

P-Channel MOSFET ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE 3. DRAIN Lead Free Product is Acquired Load/Power Switching Surface Mount Package Inte

 0.1. Size:2229K  jiangsu
 cj3139kdw.pdf pdf_icon

CJ3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETsCJ3139KDW Dual P-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX SOT-363 95 1 8 TYP GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). Includi

 0.2. Size:2431K  jiangsu
 cj3139kw.pdf pdf_icon

CJ3139K

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETSCJ3139KW P-Channel Power MOSFETSOT-323 ID V(BR)DSS RDS(on)MAX 95 1 8 TYP 1. GATE 2. SOURCE GENERRAL DESCRIPTION 3. DRAIN This Single P-Channel MOSFET has been designed using advanced Power Trench process to opti

 0.3. Size:1850K  cn tech public
 pcj3139k.pdf pdf_icon

CJ3139K

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Datasheet: CJ2306 , CJ2307 , CJ2310 , CJ2312 , CJ2321 , CJ2333 , CJ3134K , CJ3134KW , IRF540 , CJ3139KW , CJ3400 , CJ3400A , CJ3400-HF , CJ3401 , CJ3401A , CJ3401-HF , CJ3402 .

History: WMO120N04TS | TK10Q60W

Keywords - CJ3139K MOSFET datasheet

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