CJ3400A Datasheet. Specs and Replacement

Type Designator: CJ3400A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT-23

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CJ3400A datasheet

 ..1. Size:1012K  jiangsu
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CJ3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 32m @10V 30V 38m @4.5V 5.8A 1. GATE 45m @2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resistanc... See More ⇒

 8.1. Size:278K  jiangsu
 cj3400-hf.pdf pdf_icon

CJ3400A

MOSFET Comchip S M D D i o d e S p e c i a l i s t CJ3400-HF (N-Channel ) Reverse Voltage 30 Volts Forward Current 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) - N-Channel Enhancement mode field effect transistor. 3 - High dense cell design for extermely low RDS(ON) 0.055(1.40) 0.047(1.20) - Exceptional on-resistance and maximum DC current capab... See More ⇒

 8.2. Size:169K  jiangsu
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CJ3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON) 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN MARKING R0 Maximum ratings ( Ta=25 unless otherwise noted) Parameter... See More ⇒

 8.3. Size:1722K  cn vbsemi
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CJ3400A

CJ3400 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1... See More ⇒

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Detailed specifications: CJ2312, CJ2321, CJ2333, CJ3134K, CJ3134KW, CJ3139K, CJ3139KW, CJ3400, IRFP460, CJ3400-HF, CJ3401, CJ3401A, CJ3401-HF, CJ3402, CJ3404, CJ3404-HF, CJ3406

Keywords - CJ3400A MOSFET specs

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