All MOSFET. CJ3400A Datasheet

 

CJ3400A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJ3400A
   Marking Code: R0A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.4 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 12 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
   Maximum Drain Current |Id|: 5.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 7 nS
   Drain-Source Capacitance (Cd): 108 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm
   Package: SOT-23

 CJ3400A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJ3400A Datasheet (PDF)

 ..1. Size:1012K  jiangsu
 cj3400a.pdf

CJ3400A CJ3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor SOT-23 ID V(BR)DSS RDS(on)MAX 32m@10V30V 38m@4.5V5.8A1. GATE 45m@2.5V2. SOURCE 3. DRAIN FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resistanc

 8.1. Size:278K  jiangsu
 cj3400-hf.pdf

CJ3400A CJ3400A

MOSFETComchipS M D D i o d e S p e c i a l i s tCJ3400-HF (N-Channel )Reverse Voltage: 30 VoltsForward Current: 5.8 ARoHS DeviceHalogen Free SOT-23Features0.118(3.00)0.110(2.80) - N-Channel Enhancement mode field effect transistor. 3 - High dense cell design for extermely low RDS(ON)0.055(1.40)0.047(1.20) - Exceptional on-resistance and maximum DC current capab

 8.2. Size:169K  jiangsu
 cj3400.pdf

CJ3400A CJ3400A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE 1. GATE High dense cell design for extremely low RDS(ON) 2. SOURCE Exceptional on-resistance and maximum DC current capability 3. DRAIN MARKING: R0 Maximum ratings ( Ta=25 unless otherwise noted) Parameter

 8.3. Size:1722K  cn vbsemi
 cj3400.pdf

CJ3400A CJ3400A

CJ3400www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , FTB07N08N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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