CJA03N10-HF Datasheet. Specs and Replacement
Type Designator: CJA03N10-HF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT-89
CJA03N10-HF substitution
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CJA03N10-HF datasheet
cja03n10-hf.pdf
MOSFET CJA03N10-HF N-Channel RoHS Device Halogen Free 1 Gate SOT-89-3L Features 2 Drain 3 Source 0.181(4.60) -Special process technology for high ESD capability. 0.173(4.40) 0.061(1.55) -High density cell design for extremely low RDS(ON). REF. -Good stability and uniformity with high EAS. 0.102(2.60) 0.167(4.25) -Excellent package for good heat dissipation. 0.091(2.3... See More ⇒
cja03n10s.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10S N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 100V 3A 140m @ 10V DESCRIPTION 1. GATE The CJA03N10S uses advanced trench technology and design to 2. DRAIN provide excellent RDS(ON) with low gate charge .This device is suitable for 3. SOURCE use in a wide variety of app... See More ⇒
cja03n10.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 100V 3A 140m @ 10V 1. GATE 2. DRAIN DESCRIPTION 3. SOURCE The CJA03N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of... See More ⇒
Detailed specifications: CJ3407, CJ3415, CJ3420, CJ4153, CJ502K, CJ8810, CJ8820, CJA03N10, 7N65, CJA9451, CJA9452, CJB01N65B, CJB02N65, CJB04N60A, CJB04N65, CJB04N65A, CJB08N65
Keywords - CJA03N10-HF MOSFET specs
CJA03N10-HF cross reference
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CJA03N10-HF replacement
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