CJA03N10-HF - параметры транзистора MOSFET, его аналоги, datasheet

CJA03N10-HF Datasheet (PDF)

..1. Size:153K comchip
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MOSFETCJA03N10-HFN-ChannelRoHS DeviceHalogen Free 1 : Gate SOT-89-3LFeatures2 : Drain3 : Source0.181(4.60) -Special process technology for high ESD capability.0.173(4.40)0.061(1.55) -High density cell design for extremely low RDS(ON).REF. -Good stability and uniformity with high EAS.0.102(2.60) 0.167(4.25) -Excellent package for good heat dissipation. 0.091(2.3

6.1. Size:2234K jiangsu
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10S N-Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-89-3L 100V3A140m@ 10VDESCRIPTION 1. GATE The CJA03N10S uses advanced trench technology and design to 2. DRAIN provide excellent RDS(ON) with low gate charge .This device is suitable for 3. SOURCE use in a wide variety of app

6.2. Size:699K jiangsu
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 100V3A140m@ 10V1. GATE 2. DRAIN DESCRIPTION 3. SOURCE The CJA03N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .